The manual for the MJE340 transistor covers its setup and operation by providing detailed specifications such as maximum ratings, electrical characteristics, and package dimensions. It also includes troubleshooting information through typical characteristics graphs and safe operating area guidelines.

• Brand: Manuals
• Model: BJT
• Type: manual
• File size: 36.4 KB

Manual Overview

The MJE340 is a high-voltage, general-purpose NPN epitaxial silicon transistor, suitable for applications involving transformers. It features a high collector-emitter breakdown voltage of 300V and can handle a collector current of up to 500mA. The transistor is designed to operate within a junction temperature range of -65°C to 150°C, with a maximum power dissipation of 20W at 25°C. For troubleshooting, technicians should verify the collector-emitter breakdown voltage (BVCEO) and ensure it meets the minimum requirement of 300V under test conditions of IC = 1mA and IB = 0. The collector cut-off current (ICBO) should not exceed 100µA at VCB = 300V, and the emitter cut-off current (IEBO) should remain below 100µA at VEB = 3V. Calibration involves checking the DC current gain (hFE), which should fall between 30 and 240 at VCE = 10V and IC = 50mA. The transistor’s safe operating area and power derating must be considered during board-level integration to prevent thermal overload.

Quick Issues Covered

• Diagnose collector-emitter breakdown voltage issues in MJE340 transistors.
• Identify collector cut-off current errors for accurate troubleshooting.
• Trace circuit schematics for effective fault isolation and repair.

Overview

The MJE340 is a high voltage NPN epitaxial silicon transistor designed for general-purpose applications. It features a high collector-emitter breakdown voltage and is suitable for transformer use. It is a complement to the MJE350 and comes in a TO-126 package. The manual provides absolute maximum ratings, electrical characteristics, and typical characteristics of the transistor, including parameters like collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, and collector dissipation.

Specifications

• High Collector-Emitter Breakdown Voltage
• Suitable for Transformer
• Complement to MJE350
• TO-126
• NPN Epitaxial Silicon Transistor
• Collector-Base Voltage 300 V
• Collector-Emitter Voltage 300 V
• Emitter-Base Voltage 5 V
• Collector Current 500 mA
• Collector Dissipation 20 W
• Junction Temperature 150 °C
• Storage Temperature -65 ~ 150 °C
• Collector-Emitter Breakdown Voltage 300 V
• Collector Cut-off Current 100 µA
• Emitter Cut-off Current 100 µA
• DC Current Gain 30 – 240

Controls & Indicators

Refer to the PDF for details.

Installation / Setup

Refer to the PDF for details.

Operation

Refer to the PDF for details.

Troubleshooting & Error Codes

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Safety & Warnings

The source does not contain any explicit safety warnings or precautions.

Download BJT Manual (PDF – 36.4 KB)

Mje340npn-hi-volt BJT manual: Troubleshoot and repair BJT circuits efficiently. File size: 36.4 KB.

• Brand: Mje340npn-hi-volt
• Model: BJT
• Type: Manual
• File size: 36.4 KB

Overview

Brief overview of the product.

Specifications

• Key spec 1
• Key spec 2

Controls & Indicators

Control panel/button layout.

Installation / Setup

1. Step 1…
2. Step 2…

Operation

Basic usage, modes, cycles.

Troubleshooting & Error Codes

Safety & Warnings

• Important warning…

Downloads

Download BJT manual (PDF)